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Semiconductor Hole Storage

October 23rd Fact-of-the-Day

Holes injected across a semiconductor junction interface from a P-region into an N-region are capable of penetrating a considerable time and distance into an N-region before losing their charge by recombination. The result is that semiconductor junction current continues flowing for appreciable time after an input pulse drops to zero. This phenomenon, which is common to some degree in all forward-biased diodes and transistor junctions, is known as 'hole storage.' Hole storage degrades the performance of diodes and transistors at high frequencies. ©2004 Martek International All rights reserved.

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